The Takeda Award Message from Chairman Awardees Achievement Fact Awards Ceremony Forum 2001
2002

Achievement Facts Sheet
Social/Economic Well-Being

Executive Summary
Achievement and Creativity
1. Role of light emitting semiconductor device
2. Light emitting devices
3. GaN-based blue light emitting device development by Akasaki and Amano
4. GaN-based blue light emitting device development by Nakamura
5. Repercussion effects
6. Conclusion
REFERENCES
Figure 1
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Achievement Fact


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Achievement and Creativity
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REFERENCES

1) Ohki, Y., Toyoda, Y., Kobayasi, H., and Akasaki, I. "Fabrication and properties of a practical blue-emitting GaN" Inst. Phys. Conf. Ser. 63, 479(1981).
2) Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y. "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer" Appl. Phys. Lett. 48,353(1986).
3) Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., Sawaki, N.,"Effects of AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1-xAlxN films grown on sapphire substrate by MOVPE", J. Crystal Growth 98, 209(1989).
4) Amano, H. and Akasaki, I., "Fabrication and properties of GaN p-n junction LED", Mat. Res. Soc. Extended Abstract (EA-21) 165(1990).
5) Amano, H., Akasaki, I., Kozawa, T., Hiramatsu, K., Sawaki, N., Ikeda, K., and Ishii, Y. "Electron Beam Effects on Blue Luminescence of Zinc-Doped GaN" J. Lumin. 40&41,121(1988).
6) Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I. "P-Type conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation(LEEBI)" Jpn. J. Appl. Phys. 28,L2112(1989).
7) Amano, H., Asahi, T., and Akasaki, I. "Stimulate Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer" Jpn. J. Appl. Phys. 29,L205(1990).
8) Akasaki, I., Amano, H., Sota, S., Sakai, H., Tanaka, T., and Koike, M. "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device" Jpn. J. Appl. Phys. 34,L1517(1995).
9) Akasaki, I., Sota, S., Sakai, H., Tanaka, T., Koike, M., and Amano, H. "Shortest wavelength semiconductor laser diode"Electron. Lett. 32,1105(1996).
10) Nakamura, S. et al. "Novel metalorganic chemical vapor deposition system for GaN growth" Appl. Phys. Lett. 58,2021(1991).
11) Nakamura, S. And Mukai, T. "High-Quality InGaN Films Grown on GaN Films" Jpn. J. Appl. Phys. 31,L1457(1992).
12) Nakamura, S. "GaN Growth Using Buffer Layer" Jpn. J. Appl. Phys. 30,L1705(1991).
13) Nakamura, S. et al. "Thermal Annealing Effects on P-Type Mg-Doped GaN Films" Jpn. J. Appl. Phys. 31,L139(1992).
14) Nakamura, S. et al. "Hole Compensation Mechanism of p-type GaN Films" Jpn. J. Appl. Phys. 31,1258(1992).
15) Nakamura, S. et al. "Candela-Class High-Brightness InGaN/AlGaN Double-Hetrostructure Blue-Light-Emitting Diodes" Appl. Phys. Lett. 64,1687(1994).
16) Nakamura, S. et al. "High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes" Appl. Phys. Lett 67,1868(1995).
17) Nakamura, S. et al. "InGaN-Based Multi-Quantum-Well-Structure Laser Diodes" Jpn. J. Appl. Phys. 35,L74(1996).
18) Nakamura, S. et al. "Room-temperature continuou-wave operation of InGaN multi-quantum-well structure laser diodes" Appl. Phys. Lett. 69,4056(1996).
19) Usui, A. et al. "Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy" Jpn. J. Appl. Phys. 36,L899(1997).
20) Nakamura, S. "Current Status and Future Prospects of InGaN-Based Laser Diodes" JSAP International 1,5(2000).
21) http://www.energy.ca.gov/releases/2002_releases/2002-03-14_led_signals.html
Asahi Newspaper 2002/7/8 News story
22) Taguchi, T "White LED and lighting system" O plus E p10,Aug.(2000).
23) http://www.compoundsemiconductor.net/magazine/article/8/4/6/2
24) http://e-solution.nkk.co.jp/kankyo-q/q1-5.html
http://it.nikkei.co.jp/it/archive/chokoku/2001032505715p8.cfm
SRI report
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